features ?high output power: p 1db = 36.5dbm (typ.) ?high gain: g 1db = 9.0db (typ.) ?high pae: add = 35% (typ.) ?low im 3 = -46dbc@po = 25.5dbm ?broad band: 7.1 ~ 7.9ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed package 1 edition 1.2 september 1999 FLM7179-4F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25.0 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.2 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1700 2600 - 1700 - -0.5 -1.5 -3.0 -5.0 - - 8.0 9.0 - -35- 35.5 36.5 - v ds = 5v, i ds = 85ma v ds = 5v, i ds = 1100ma v ds = 5v, v gs = 0v i gs = -85 a v ds =10v, i ds = 0.65 i dss (typ.), f = 7.1 ~ 7.9 ghz, z s =z l = 50 ohm f = 7.9 ghz, ? f = 10 mhz 2-tone test p out = 25.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 1100 1300 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 5.0 6.0 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise -- 80 c ? t ch description the FLM7179-4F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM7179-4F c-band internally matched fet power derating curve 12 24 30 18 6 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power & im 3 vs. input power 12 14 16 18 20 22 input power (s.c.l.) (dbm) s.c.l.: single carrier level 25 27 29 31 33 23 21 -50 -40 -20 -10 -30 output power (s.c.l.) (dbm) im 3 im 3 (dbc) v ds =10v f 1 = 7.9 ghz f 2 = 7.91 ghz 2-tone test p out output power vs. frequency pin=28.5dbm 24.5dbm 26.5dbm 22.5dbm 7.1 7.3 7.5 7.7 7.9 frequency (ghz) 34 35 36 37 38 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 7.5 ghz 18 20 22 24 26 28 input power (dbm) 34 36 38 32 30 28 15 30 45 60 output power (dbm) add p out add (%)
3 FLM7179-4F c-band internally matched fet s-parameters v ds = 10v, i ds = 1100ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 6900 .712 140.3 3.823 -24.3 .025 -45.8 .402 -113.7 7000 .714 127.0 3.840 -37.1 .032 -67.6 .354 -127.8 7100 .710 120.5 3.850 -42.7 .036 -77.9 .324 -136.3 7200 .701 108.1 3.852 -55.5 .045 -93.2 .288 -154.2 7300 .684 96.2 3.831 -68.0 .053 -106.9 .259 -175.1 7400 .658 84.6 3.820 -80.9 .061 -122.3 .249 162.0 7500 .625 73.0 3.804 -93.5 .068 -135.6 .251 140.4 7600 .584 61.4 3.783 -106.3 .075 -148.9 .262 120.3 7700 .535 49.2 3.768 -119.4 .082 -162.2 .275 102.2 7800 .481 36.1 3.756 -132.6 .088 -174.2 .295 86.7 7900 .421 20.8 3.744 -146.1 .093 172.4 .307 72.3 8000 .359 2.3 3.726 -160.0 .100 159.7 .305 59.4 8100 .300 -22.5 3.708 -174.9 .106 145.5 .293 45.9 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 0.2 0.1 10 250 50 ? scale for |s 21 | 1 2 3 4 7.3 6.9 ghz 6.9 ghz 7.1 7.1 7.5 7.5 7.3 7.7 7.7 7.9 7.9 8.1 8.1 scale for |s 12 | 7.3 7.3 6.9 ghz 6.9 ghz 7.1 7.1 7.5 7.5 7.7 7.7 7.9 7.9 8.1 8.1
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